Hybridization of a sigma-delta-based CMOS hybrid detector
نویسنده
چکیده
The Rochester Imaging Detector Laboratory, University of Rochester, Infotonics Technology Center, and Jet Process Corporation developed a hybrid silicon detector with an on-chip sigma-delta (Σ∆) ADC. This paper describes the process and reports the results of developing a fabrication process to robustly produce high-quality bump bonds to hybridize a back-illuminated detector with its Σ∆ ADC. The design utilizes aluminum pads on both the readout circuit and the photodiode array with interconnecting indium bumps between them. The development of the bump bonding process is discussed, including specific material choices, interim process structures, and final functionality. Results include measurements of bond integrity, cross-wafer uniformity of indium bumps, and effects of process parameters on the final product. Future plans for improving the bump bonding process are summarized.
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